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      https://www.ias.ac.in/article/fulltext/boms/009/02/0131-0136

    • Keywords

       

      Thermoelectric power; band cross-over; narrow gap semi-conductors; lead tin telluride

    • Abstract

       

      Resistivity and thermoelectric power studies have been carried out on two semiconductor alloy systems viz Pb0·8Sn0·2Te and Pb0·6Sn0·4Te up to 35 kbar pressure. Thermoelectric power and resistivity data on Pb0·8Sn0·2Te indicate that the energy gapEg=EL6EL6+ decreases with pressure resulting in a zero gap state near 35 kbar pressure. TEP studies on the alloy system Pb0·6Sn0·4Te provide direct evidence for a pressure induced L6→L6+ cross over transition.

    • Author Affiliations

       

      T G Ramesh1 V Shubha1 P S Gopalakrishnan1

      1. Materials Science Division, National Aeronautical Laboratory, Bangalore - 560 017, India
    • Dates

       
  • Bulletin of Materials Science | News

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