1. Home
    2. Journals
    3. Bulletin of Materials Science
    4. Volume 8
    5. Issue 4

    • Growth of low dislocation density single crystals of nickel

      S K Khanna K Govinda Rajan

      Volume 8 Issue 4 October 1986 pp 467-470

    • Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/008/04/0467-0470

    • Keywords

       

      Nickel crystals; high pressure growth; Czochralski technique

    • Abstract

       

      Low dislocation density single crystals of nickel have been grown at high ambient pressure by the Czochralski method. X-ray Laue picture shows that the crystals are strain-free. The dislocation density was determined to be <103/cm2 by the etching procedure. It was found that the necking and cone regions are very critical in the dislocation introduction in the crystals. An increase in the ambient pressure used during the growth seems to aid the crystal quality.

    • Author Affiliations

       

      S K Khanna1 K Govinda Rajan1

      1. Materials Science Laboratory, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102, India

    • Dates

       
      Published
      October 1986
      Manuscript received
      16 January 1986
      Manuscript revised
      24 April 1986

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2023-2024 Indian Academy of Sciences, Bengaluru.

Contact | Site index