• Preparation and properties of Bi2−xAsxS3 thin films by solution-gas interface technique

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    • Keywords


      Solution-gas interface technique; Bi2−xAsxS3 films; resistivity

    • Abstract


      The solution gas interface technique by which thin films of Bi2−xAsxS3 were deposited is described in this paper. The semiconducting properties of the interface grown Bi2−xAsxS3 thin films are studied. The optical absorption, dark resistivity and thermoelectric power of the films were studied and results are reported.

    • Author Affiliations


      S H Pawar1 P N Bhosale1

      1. Department of Physics, Shivaji University, Kolhapur - 416 004, India
    • Dates

  • Bulletin of Materials Science | News

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      Posted on July 25, 2019

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