• Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/008/03/0315-0318

    • Keywords

       

      Thin films; SnO2:F; transparent conductors; chemical vapour deposition

    • Abstract

       

      Highly transparent and highly conducting films of SnO2:F were prepared by chemical vapour deposition technique. The films prepared at 350°C substrate temperature and 2·5 lit. min−1 flow rate of oxygen showed maximum figure of merit. The optimum doping concentration of fluorine was 1·02 wt%. The Hall experiment showed that the films prepared at optimum conditions had high carrier concentration and high mobility.

    • Author Affiliations

       

      A K Saxena1 R Thangaraj1 S P Singh1 O P Agnihotri1

      1. Physics Department, Indian Institute of Technology, New Delhi - 110 016, India
    • Dates

       
  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.