Highly transparent and highly conducting films of SnO2:F were prepared by chemical vapour deposition technique. The films prepared at 350°C substrate temperature and 2·5 lit. min−1 flow rate of oxygen showed maximum figure of merit. The optimum doping concentration of fluorine was 1·02 wt%. The Hall experiment showed that the films prepared at optimum conditions had high carrier concentration and high mobility.
Volume 42 | Issue 6
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