• Study of impurity induced modifications in amorphous N-type (GeSe3·5)100−xBix using high pressure technique

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    • Keywords


      Amorphous semiconductors; pressure induced effects; chalcogenide glasses; doping of chalcogenide glasses

    • Abstract


      The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe3·5)100−xBix (x=0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x=4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth impurity.

    • Author Affiliations


      KL Bhatia1 2 G Parthasarathy1 ESR Gopal1 3

      1. Instrumentation and Services Unit, Indian Institute of Science, Bangalore - 560 012, India
      2. Department of Physics, Maharshi Dayanand University, Rohtak - 124 001, India
      3. Department of Physics, India
    • Dates

  • Bulletin of Materials Science | News

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