• Deep electron trap level in semi-insulating GaAs

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    • Keywords


      Semiconductor devices and materials; semiconductors (III-V); Hall measurements; electron traps

    • Abstract


      The experimental data on the Hall measurements have been used to characterize deep electron trapping levels in Cr doped semi-insulating GaAs crystals. The energy of the level below the conduction band edge has been found to be ∼ 0·8 eV and is thought to be related to Ga vacancies in the host crystal and Cr impurities.

    • Author Affiliations


      A K Saxena1

      1. Department of Electronics and Communication Engineering, University of Roorkee, Roorkee - 247 667, India
    • Dates

  • Bulletin of Materials Science | News

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