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    • Heterogeneous nucleation and growth of polycrystalline silicon

      R Dhanasekaran P Ramasamy

      Volume 7 Issue 5 December 1985 pp 411-417

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/007/05/0411-0417

    • Keywords

       

      Silicon layer; heterogeneous nucleation; SiO2 and Si3N4 substrates; growth rates; step-kink

    • Abstract

       

      The heterogeneous nucleation theory of silicon on SiO2 and Si3N4 substrates has been developed using classical theory. It is shown that the experimental observations can be explained on the basis of the bond energies of O-H, N-H and Si-H. A reaction model is proposed for the growth of silicon on silicon from silane, using hydrogen as a carrier gas in the temperature region 600–900°C. The growth rate of silicon is shown to be equal toPSiH4PH2 when the partial pressure of hydrogen is high, and is independent of the total pressure and the partial pressure of hydrogen in the lower region.

    • Author Affiliations

       

      R Dhanasekaran1 P Ramasamy1

      1. Crystal Growth Centre, A. C. College of Technology, Anna University, Madras - 600 025, India

    • Dates

       
      Published
      December 1985
      Manuscript received
      20 March 1985
      Manuscript revised
      5 July 1985

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