• Auger recombination rate in quantum well lasers

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      https://www.ias.ac.in/article/fulltext/boms/007/02/0149-0154

    • Keywords

       

      Auger recombination; quantum well lasers; semiconductors; InGaAsP

    • Abstract

       

      Auger recombination is the dominant non-radiative process in InGaAsP quantum well lasers and is responsible for the poor temperature dependence of the threshold current density. In all recent calculations of the Auger rate the electron-electron interaction potential is taken to be either of the bulk form or an approximate form derived from it. In the present work, the rate is calculated by taking an appropriate potential valid for quasi two-dimensional electrons and the expected changes are pointed out. The calculated Auger life-time is in agreement with the values reported in the literature.

    • Author Affiliations

       

      P K Basu1

      1. Institute of Radio Physics and Electronics, 92 Acharya Prafulla Chandra Road, Calcutta - 700 009, India
    • Dates

       
  • Bulletin of Materials Science | News

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