The sheet resistivity of tin dioxide films deposited by electron-beam evaporation has been studied during annealing, both as a function of time and temperature. The annealing behaviour of SnO2 films under the above two different conditions is consistent. A qualitative interpretation has been given for the decrease and the minimum observed in the resistivity. The increase in resistivity has been confirmed by scanning-electron micrographs. The films were also characterized by x-ray diffractometry.
Volume 42 | Issue 6
Click here for Editorial Note on CAP Mode