• Oxidation of thin films of tin at room temperature in hydrogen sulphide atmosphere

    • Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/006/06/1019-1027

    • Keywords

       

      Oxidation; tin; hydrogen sulphide; thin films; resistance change

    • Abstract

       

      The oxidation of thin films of tin at room temperature in an atmosphere containing 10% H2S and 90% air has been studied by measuring the changes in resistance of thin films. Morphological studies have also been carried out using optical and scanning electron microscopes. Reaction kinetics change from logarithmic law at ordinary atmospheres to a power law in the presence of H2S. The basis of formation of sulphide along with the oxide is explained, the former growing on a lower layer and the latter on an upper layer.

    • Author Affiliations

       

      C I Muneera1 V Unnikrishnan Nayar1

      1. Department of Physics, University of Kerala, Kariavattom, Trivandrum - 695 581, India
    • Dates

       
  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.