• Electrical properties of polycrystalline silicon and zinc oxide semiconductors

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    • Keywords


      Polycrystalline semiconductors; electrical properties; grain boundary effects; polysilion; ZnO varistors

    • Abstract


      Polycrystalline silicon and zinc oxide ceramic are important electronic materials. The electrical properties which determine the applications of polycrystalline silicon in integrated circuits and solar cells and that of ZnO ceramic in varistors are due primarily to grain boundary effects in them. A large amount of information in this area has already been gathered in literature but the quantitative understanding of grain boundary effects in these materials is not yet complete. In this review the important aspects of grain boundaries and their effects on transport and photoelectric properties of polycrystalline silicon and on the I–V characteristic of ZnO varistors are discussed.

    • Author Affiliations


      S N Singh1 S Kumari1 B K Das1

      1. National Physical Laboratory, New Delhi - 110 012, India
    • Dates

  • Bulletin of Materials Science | News

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      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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