• Defects in GaAs

    • Fulltext


        Click here to view fulltext PDF

      Permanent link:

    • Keywords


      Native defects; dislocations; device degradation

    • Abstract


      A comprehensive review of defects in GaAs with focus on native point defects and dislocations is given. The effects of these defects on devices are also considered. It is pointed out that a unified point defect model cannot at present be drawn from the available information. The importance of including anti-site defects in the point defect models which have hitherto only considered vacancies and interstitials is stressed. Attention is drawn to the need for understanding the dominant equilibrium native defects in GaAs both from fundamental and technological considerations. In this respect new experimental techniques are suggested to understand and control the defect structure. The current understanding of dislocations in GaAs is very much in its infancy compared to that in elemental semiconductors. Both theoretical work and careful experiments are wanting. This is essential since dislocations have been directly implicated in the degradation of GaAs devices.

    • Author Affiliations


      V Swaminathan1

      1. Bell Laboratories, Murray Hill, New Jersey - 07974, USA
    • Dates

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.