New chemical methods for the deposition of thin film of Cu1·8S and TlSe have been developed. The deposition of Cu1·8S thin film has been performed by thiourea, ammonia and Cu2+ ions at room temperature, while TlSe thin films are obtained from triethanolamine as complexing agent, ammonia, sodium selenosulphate solution and Tl1+ ions at room temperature. The electrical resistance, mobility, carrier concentration and optical band gap have been measured.
Volume 42 | Issue 6
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