• Characterization of a-Si:H thin films prepared by dc glow discharge of silane

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    • Keywords

       

      Characterization; glow discharge; amorphous silicon; thin film; silane

    • Abstract

       

      A dc glow discharge apparatus for preparing amorphous silicon films from silane gas is described. The films are characterized by electron microscopy, infrared spectroscopy, electrical conductivity and photoconductivity. The deposition parameters which give good photoconducting films are established. The Staebler-Wronski effect is studied and is found to be smaller in vacuum than in air. A photovoltage is observed in structures with gold as the Schottkybarrier metal. The conversion efficiency of the device is about 1%. The results are compared with those in the literature, and the improvements which might result in a better conversion efficiency are pointed out.

    • Author Affiliations

       

      D S Misra1 P N Dixit1 S C Agarwal1

      1. Department of Physics, Indian Institute of Technology, Kanpur - 208 016, India
    • Dates

       
  • Bulletin of Materials Science | News

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