The compound tin telluride was prepared with the constituent elements (Sn and Te) by using the standard fusing technique. From x-ray studies the compound was identified as tin telluride. The detectors in the form of thin films were prepared by vacuum evaporation. Conductivity and photoconductivity measurements of the detectors were carried out in the temperature range of 130 to 300 K. These detectors were sensitized by baking them in air at a fixed temperature (413 K) for a fixed time (1800 sec). Resistivity measurements of the detectors with consecutive bakings were also carried out. The photosensitivity of the detectors increases as it is baked reaching an optimum value after which the sensitivity decreases whereas the resistivity of the detectors increases continuously with baking. It is observed that photosensitivity of the detectors increases with decrease of temperature. The increase of sensitivity with baking has been explained on the basis of modulation of barrier due to the development of photovoltage at SnTe and its oxide heterojunctions.
Volume 42 | Issue 6
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