• Investigation on schottky diodes on amorphous hydrogenated silicon

    • Fulltext


        Click here to view fulltext PDF

      Permanent link:

    • Keywords


      Amorphous semiconductors; solar cells; Schottky diodes; hydrogenated silicon

    • Abstract


      Schottky barrier diodes with near-ideal characteristics have been fabricated on amorphous hydrogenated silicon prepared by decomposition of a mixture of 10% silane and 90% hydrogen. The interface properties are found to be stable up to heat treatment of 300°C. From a detailed investigation of dark and photovoltaic properties it is concluded that the density of states in the mobility gap is sufficiently small so that there is no significant carrier recombination in the space charge region.

    • Author Affiliations


      SM Pietruszko1 2 K L Narasimhan1 S Guha1

      1. Tata Institute of Fundamental Research, Bombay - 400 005, India
      2. Warsaw Technical University, Warsaw, Poland
    • Dates

  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.