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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/002/02/0145-0150

    • Keywords

       

      Vapour transport; polytypism; dichalcogenide; stacking fault; half width

    • Abstract

       

      A realistic estimation of growth and deformation fault probability has been made in the crystals of WSe2 grown by a direct vapour transport method. Electron microscopy of the specimens revealed the presence of two-fold ribbons from which theγ/μ ratio has been determined. Attempts to study polytypism have also been described.

    • Author Affiliations

       

      M K Agarwal1 H B Patel1 2 T C Patel1

      1. Department of Physics, Sardar Patel University, Vallabh Vidyanagar - 388 120, India
      2. Arts and Science College, Bhadran, Anand, India
    • Dates

       
  • Bulletin of Materials Science | News

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    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

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