Proximity effect of electron beam lithography

on single-electron transistors

SHU-FEN HU^1,*, KUO-DONG HUANG², YUE-MIN WAN² and

CHIN-LUNG SUNG¹

¹National Nano Device Laboratories, No. 26, Prosperity Road I, Science-based

Industrial Park, Hsinchu 30078, Taiwan

²Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan

^*Corresponding author. E-mail: sfhu@mail.ndl.org.tw

Abstract. A simple method, based on the proximity effect of

electron beam lithography, alleviated by exposing various

shapes in the pattern of incident electron exposures with

various intensities, was applied to fabricate silicon

point-contact devices. The drain current $(I_{\rm d})$ of

the device oscillates against gate voltage. The

electrical characteristics of the single-electron

transistor were observed to be consistent with the

expected behavior of electron transport through gated

quantum dots, up to 150 K. The dependence of the

electrical characteristics on the dot size reveals that

the $I_{\rm d}$ oscillation follows from the Coulomb

blockade by poly-Si grains in the poly-Si dot. The method

of fabrication of this device is completely compatible

with complementary metal-oxide-semiconductor technology,

raising the possibility of manufacturing large-scale

integrated nanoelectronic systems.

Keywords. Semiconductors; transport; nanostructures.

PACS No 73.23.Hk