Electrical properties of
a-GexSe100-x
ABDOLALI ZOLANVARI1, NAVDEEP GOYAL2,* and
S K TRIPATHI2
1Department of Physics, Arak University, Arak 38156, Iran
2Department of Physics, Panjab University, Chandigarh 160 014, India
*Corresponding author
E-mail: ngoyal@pu.ac.in
Abstract. In general, the conductivity in chalcogenide glasses at higher
temperatures
is dominated by band conduction (DC
conduction). But, at lower temperatures, hop-
ping conduction dominates over band
conduction. A study at lower temperature can,
eventually, provide useful information about
the conduction mechanism and the defect
states in the material. Therefore, the study
of electrical properties of Ge$_x$Se$_{100-x}$ in the lower
temperature region (room temperature) is interesting. Temperature and frequency
dependence of Ge$_x$Se$_{100-x} ($x = 15$, 20 and
25) have been studied over different range of temperatures and frequencies. An
agreement between experimental and theoretical results suggested that the
behaviour of germanium selenium system (Ge$_x$Se$_{100-x}$) have been successfully explained by correlated barrier hopping (CBH)
model.
Keywords. Chalcogenides; hopping conduction; defect states.