A K RAYCHAUDHURI, ARINDAM GHOSH ^†  and SWASTIK KAR

Department of Physics, Indian Institute of Science, Bangalore 560 012, India

^† Present address: Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, UK

Abstract.

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal--insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K < T < 500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10^-2 < f < 4 x 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T < 100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T > 200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.

Keywords:  1/f noise; doped Si; MI transition.

Pacs Nos.  72.70.+m; 72.80.Cw; 72.80.Ng