Bulletin  of  Materials  Science

Volume 13, January-December 1990

CONTENTS

Home - - Go Back - - Contents



Number 1&2, March  

First National Seminar on GaAs and III-V compound semiconductors

Foreword
1-2
Bulk growth of polycrystalline indium phosphide -- J N Roy
3-10
Growth of III-V compounds by liquid phase epitaxy -- B M Arora
11-26
Bulk growth of gallium antimonide crystals by Bridgman method -- U N Roy and S Basu
27-32
An investigation of the growth of In0.53Ga0.47 As layers on InP by liquid phase epitaxy -- S Dhar, Mala Mitra, J B Roy and B R Nag
33-36
LPE growth of InGaAsP:InP high purity layers using rare earth elements--R K Sarin,A T Gorelenok and V I Korolkov
37-42
Electrodeposition kinetics of gallium arsenide-- S Moorthy Babu, L Durai, R Dhanasekaran and P Ramasamy
43-50
Ion implantation and laser treatment of III-V compound semiconductor: A brief report -- S B Ogale

51-57
Hot electron transport in In(0.53)Ga(0.47) as - - B R Nag
57-64
Some key properties of low dimentional electron gas in semiconductors -- P K Basu
65-74
Photoluminescence and heavy doping efects in InP -- Seishu Bendapudi and D N Bose
75-82
Characterization of defects in gallium arsenide -- Vikaram Kumar and Y N Mohapatra
83-88
Characterization of vacancy-like defects in III-V compound semiconductors using positron annihilation technique -- A Sen Gupta
89-94
Multiple implantation of 29Si in semi-insulating GaAs and its characterization -- M B Dutt, R Nath, R Kumar and Y P Khosla
95-98
GaAs MESFET and related processes -- O P Daga, J K Singh, B R Singh, H S Kothari and W S Khokhle
99-112
Properties of gallium arsenide and indium phosphide impatts at microwave and millimetre-wave frequencies -- S K Roy and J P Banerjee
113-120
High electron mobility transistors -- S Subramanin
121-134
Gallium arsenide digital integrated circuits -- D Bhattacharya
135-150
Semiconductor lasers for optical communication -- A K Srivastava
151-160
Number 3, June 1990
 
Growth and characterization of Na3BaCl5.2H2O -- S Asath Bahadur, VRamakrishnan and R K Rajaram
161-164
Synthesis and boron nitride -- A K Basu and K Mukherji
164-172
Preparation and characterization of silicon nitride-silicon carbide composited -- N Kishan Reddy and J Mukherji
173-178
Combustion synthesis and properties of fine particle fluorescent aluminous oxides -- J J Kingsley, N Manickam and K C Patil
179-190
Structural and electrical study of ZnCuTiO4. ZnCuSn)4 and ZnCuGeO4 synthesised using metallic copper -- M P Tare, R R Tripathi, S Sampath and S M Tare
191-196
Electrical conduction of sodium acetylacetonate -- A Sawaby
197-204
Studies on transmission behaviour of certain manganese containing, cerium and arsenic doped alkali-lime-silica glasses -- S A Muqtader, S N Alvi, M A Jaleel and S G Samdani
205-210
Positron annihilation studies on nasicon analogues containing cation vacancies -- V Sreeramalu, H R Sreepad, a chandrashekara, V Ravindrachary and S Gopal
211-216
An expression for contact area between particles in a powder compact in terms of the porosity -- N Ramakrishnan and K Sivakumar
217-226
Number 4, September
 
Standardization of investment casting process using modified binder hydrolysis -- Kayala Mallikarjuna Babu, P Martin Jebaraj and M P Chowdiah
227-234
Thermodynamic properties of Pt5La, Pt5Ce, Pt5Pr, Pt5Tb and Pt5Tm intermetallics -- K T Jacob and Y Waseda
235-244
Role of alumina in flexure of glass/epoxy composited -- K Padmanabhan and K Kishore
245-254
Preparation and glass-nickel microcomposites by in sity reduction via sol-gel route -- G C Das, A Basumallick and S Mukherjee
255-258
Properties of reaction bonded silicon nitride obtained from slip cast preforms -- J Rakshit and J Mukerji
259-270
Sintering and oxidation in gel-coated SiCw/Al2)3 composited -- V Saraswati
271-282
Crystallization of mica in the K2)-SiO2-MgO-MgF2 glass system -- V Saraswati and K V S R Anjaneyulu
283-292
Electrical transport in magnetism aluminate -- Tom Mathews, K T Jacob and J P Hajra
293-300
Numbr 5, December
 
Pyroelectric properties of ferroelectric potassium-cesium vanadate and potassium-lithium vanadate -- A J Kulkarni, A P Kashid and S H Chavan
301-303
Preparation and characterization of aluminium alloy sheet Aramid fibre-laminated composites-- P Kanakalatha, M K Sridhar, Chadra Ajay, C Balasingh and A K Singh
304-312
Microstructure and thermomechanical prepreatment effects on creep behaviour of helium-implanted DIN 1-4970 austenitic stainless steel -- M K Matta and W Kesternich
313-322
Microstructures of CaSO3 0.5 H2O single crystalgrown in silica gel -- S N Patil and A Venkateswara Rao
323-329
An alternate method for determination of brittleness of ceramics and polymers -- S B Bhaduri
329-332
Surface composition and near-surface hardness studies on high dose boron implanted 304 stainless steel -- A K Goel, N D sharma, R K Mohindra, P K Ghosh and M C Bhatnagar
333-342
Composition dependence of electrical properties of simultaneously evaporated Sb-Se thin films -- P S Nikam and R R Pawar
343-350
Metallurgical characteristics of electroslag-refined MDN 250 maraging steel -- K R Udupa, D H Sastry and G N K Iyengar
351-364
A laboratory design for uniaxial hot pressing -- D S Mungebar, K B Bhatta adn A J Singh
365-370