Evaluation of microlithographic performance of ‘deep UV’

resists: Synthesis, and 2D NMR studies on alternating

‘high ortho’ novolak resins

MANEESH SHARMA^a, ANANT A NAIK^b, P RAGHUNATHAN^c and S V ESWARAN^a,*

^aSt. Stephen’s College, University of Delhi, Delhi 110 007, India

^bSolid State Physics Laboratory, Lucknow Road, Delhi 110 054, India

^cNational Brain Research Centre, Manesar 122 050, India

e-mail: sv.eswaran@gmail.com

Abstract. Lithographic evaluation of a ‘deep UV’ negative photoresist is discussed along with the synthesis

of an alternating ‘high-ortho’ novolak resin. 2-D NMR studies (COSY, NOESY, HSQC, HMBC) on this resin

are also discussed.

Graphical Abstract. Lithographic evaluation of a ‘deep UV’ negative photoresist is discussed along

with the ‘two-step’ synthesis of an alternating ‘high-ortho’ novolak resin. The

microstructure of the resin is stablished by TGA, DSC, 2-D NMR (COSY,

NOESY, HSQC, HMBC) and energy minimisation studies.

Keywords. Novolak resins; 2D-NMR; photoresist; lithography; microstructure.